agr21 090e 90 w , 2.1 10 ghz?2.1 70 ghz, n-chann e l e-mo de, la teral m o sfet introduc tion t he a g r21 090e i s a hi gh- v o l t age, gol d- me t a li z ed, la ter a l l y di f f u s e d , m e t a l ox id e s e m i c ond uc tor ( l dmo s ) rf pow er tr ans is tor s u i t abl e f o r wid eba nd co de- di v i s i on mu lti p l e ac c e s s ( w - cdm a) , an d s i n g le and mu lti c a r r i er c l as s a b w i r e l e s s b a s e s t ati o n pow er amp l i f ie r app li cat i on s. figu r e 1 . a v a ila ble p a c k a g e s feature s t y pic a l pe r f o r man c e for 2 c a r r ie r 3g pp w - c d ma sy s t em s. f 1 = 213 5 m h z a nd f 2 = 214 5 m h z w i th 3.8 4 mhz c h a nnel b w , ad ja- ce nt c han nel b w = 3. 84 m h z at f 1 ? 5 mhz an d f 2 + 5 m h z. t h ir d- or d e r di sto r t i on is me as ur ed ov er 3.8 4 mh z b w at f 1 ? 10 mhz a nd f 2 + 10 mhz . t y pi ca l p / a r a tio of 8.5 d b at 0. 01% ( p r o bab i l i t y ) ccdf: ? o u tp ut p o wer : 19 w . ? p o we r g a i n : 14 .5 d b . ? ef fi ci en c y : 26 % . ? im 3: ? 33 d b c . ? a c pr : ?3 6 db c . ? re tur n l o s s : ?12 db . hig h - r e l i abi li ty , gol d- me t a li za tio n pr o c es s . low hot c a r r i e r inj e c t io n ( hci) i ndu ce d bi as dr i f t ov er 20 ye ar s. inte r n all y mat c he d. hig h ga in, ef fic i e n c y , and li nea r i ty . inte gr ated es d p r o t ec tio n . dev i c e c a n wi ths t and a 1 0 :1 vo lt ag e s t an din g wa ve r a tio ( v s w r) a t 28 vd c, 2 140 mhz , 9 0 w c onti nu- ous wav e ( c w ) ou tput powe r . lar ge si gn al i m p eda nc e p a r a m e te r s av ai la bl e. t a b l e 1 . t h e r m al ch a r ac t e rist ic s t a ble 2 . abs o lute m a x i mum ra tings * * s t ress e s in exces s of t he absolut e m a ximum rat i ngs can caus e perm anent dam age t o t he device. t hes e are absolut e s t re ss rat - ings onl y . f unct i ona l operat ion of t he dev ice is not im pl ied at t hes e or any ot her c ondit i ons in ex cess of t hose given i n t h e operat ional sec t ions of t he dat a s heet . e xpos ure t o absolut e max i mum rat i ngs f o r ext ended periods can a d versely af f e ct device reliabil i t y . t a ble 3 . es d r a ting * * alt hough elec t ros t a t i c d i s c harge (es d ) prot ect i on circu i t r y has been designed i n t o t h is device, pro per pr ecaut i ons m u st be t a ken t o avoid ex posure t o es d and elect r ical overst res s ( eo s) during al l handli n g, assem b ly , and t e s t operat i o n s. ager e employ s a hum an-body mod e l (hb m), a mac h ine m odel (m m) , and a cha rged-devic e m odel (cd m) quali f icat i o n requirem ent in order t o determine e s d-s u s cepti b ilit y limit s a nd protec tion design ev al ua t i on. e sd volt age t h res hol d s are depende nt on t he circu i t p a ramet e rs used in eac h of t he m odels, as def ined by je dec's je sd22-a 1 14b (hb m) , jes d 22-a 1 15a (mm ), and je sd22-c 101a (cdm ) s t andar ds. cau ti o n : mo s d evi ces are su s cep t i b l e to d a mag e fro m el ec- tro s t a ti c ch arg e . reaso n a b l e p r ecau ti o n s i n h a n - d l i n g an d p a c kag i n g mo s d evi c es sh o u l d b e o b served . a g r 210 90eu ( unfla nged ) a g r 210 90ef (flan ged ) pa ram e t e r s ym v a lu e u n i t th er ma l r e si st a n c e , j unc ti on to ca se : a g r210 90e u a g r210 90e f r ? jc r ? jc 0. 7 0. 7 c/w c/w pa r a m e te r s y m v a l u e u ni t d r ai n- so ur ce v o lt ag e v ds s 65 vd c g a t e -s o u rc e v o l t a g e v gs ? 0 . 5, 15 vd c t o t a l d i ssi p a t i on at t c = 2 5 c: ag r 2 1 090 eu ag r 2 1 090 ef p d p d 25 0 25 0 w w der a te a bov e 25 c: ag r 2 1 090 eu ag r 2 1 090 ef ? ? 1.4 1.4 w/ c w/ c cw rf i nput p o wer (v ds =3 1v ) ? 30 w o p er ati ng ju nc tio n t e m per a- tur e t j 20 0 c s t or ag e t e m p er at u r e r a ng e t stg ? 6 5 , 150 c a g r 2109 0e m i n i mu m ( v ) c la ss hbm 500 1 b mm 50 a cdm 1500 4 peak devices
90 w, 2.110 ghz ? 2.170 ghz, n-channel e-mode, lateral mosfet AGR21090E electrical characteristics recommended operating conditions apply unless otherwise specified: t c = 30 c. table 4. dc characteristics table 5. rf characteristics * 3gpp w-cdma, typical p/a ratio of 8.5 db at 0.01% ccdf, f1 = 2135 mhz, and f2 = 2145 mhz. v dd = 28 vdc, i dq = 800 ma, and p out = 19 w average. nominal operating voltage 28 vdc. qualified for a maximum operating voltage of 32 vdc 0.5 v. parameter symbol min typ max unit off characteristics drain-source breakdown voltage (v gs = 0, i d = 100 a) v (br)dss 65 ?? vdc gate-source leakage current (v gs = 5 v, v ds =0v) i gss ?? 3 adc zero gate voltage drain leakage current (v ds = 28 v, v gs =0v) i dss ?? 9 adc on characteristics forward transconductance (v ds = 10 v, i d = 1 a) g fs ? 6.4 ?s gate threshold voltage (v ds =10v, i d = 300 a) v gs(th) 2.8 3.4 4.8 vdc gate quiescent voltage (v ds = 28 v, i d = 800 ma) v gs(q) 3.0 3.7 4.6 vdc drain-source on-voltage (v gs =10v, i d = 1 a) v ds(on) ? 0.11 ? vdc parameter symbol min typ max unit dynamic characteristics reverse transfer capacitance (v ds =28v, v gs = 0, f = 1.0 mhz) (this part is internally matched on both the input and output.) c rss ? 2.1 ? pf functional tests (in agere systems supplied test fixture) common-source amplifier power gain* g ps 14.0 14.5 ? db drain efficiency* 24 26 ?% third-order intermodulation distortion* (im3 distortion measured over 3.84 mhz bw @ f1 ? 10 mhz and f2 + 10 mhz) im3 ?? 33 ? 32 dbc adjacent channel power ratio* (acpr measured over bw of 3.84 mhz @ f1 ? 5 mhz and f2 + 5 mhz) acpr ?? 36 ? 35 dbc input return loss* irl ?? 12 ? 9 db power output, 1 db compression point (v dd = 28 v, f c = 2140.0 mhz) p 1db 85 93 ?w output mismatch stress (v dd = 28 v, p out = 90 w (cw), i dq = 800 ma, f c = 2140.0 mhz vswr = 10:1; [all phase angles]) no degradation in output power. 300 150 (in supplied test fixture)
AGR21090E 90 w , 2.110 ghz ? 2.170 ghz, n-channel e-mode, lateral mosfet test circuit illustrations for AGR21090E a. schematic parts list: ? microstrip line: z1 0.889 in. x 0.065 in.; z2 0.370 in. x 0.065 in.; z3 0.160 in. x 0.250 in.; z4 0.080 in. x 0.400 in.; z5 0.195 in. x 1.000 in .; z6 0.050 in. x 0.860 in.; z7 0.050 in. x 0.880 in.; z8 0.050 in. x 0.880 in.; z9 0.180 in. x 1.060 in.; z10 0.110 in. x 1.060 i n.; z11 0.260 in. x 1.060 in. x 0.065 in. taper; z12 0.195 x 0.065 in.; z13 0.395 in. x 0.065 in.; z14 0.555 in. x 0.065 in. ? atc ? chip capacitor: c1, c6: 8.2 pf 100b8r2jw500x; c2, c7, c13: 6.8 pf 100b6r8jw500x. ? sprague ? tantalum surface-mount chip capacitor: c3, c5, c11, c17: 22 f, 35 v. ? kemet ? 1206 size chip capacitor: c10, c16: 0.1 f c1206104k5rac7800. ? murata ? 0805 size chip capacitor: c9, c15: 0.01 f grm40x7r103k100al. ? johanson giga-trim ? variable capacitor: c18, c19: 0.4 pf to 2.5 pf 27281sl. ? 1206 size chip capacitor: c4, c8, c14: 22000 pf. ? 1206 size chip resistor: r2 4.7 ? , r3 1.02 k ? , r4 560 k ? . ? fair-rite ? ferrite bead: fb1 2743019447. ? taconic ? orcer rf-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. b. component layout figure 2. AGR21090E test circuit dut r2 c4 r4 r3 + c5 c3 + c2 fb1 z6 z1 c1 z2 z3 z4 z5 z10 z11 z12 z13 c9c8c7 z7 c11 c10 rf input v gg v dd rf c6 c18 output + 1 3 2 pins: 1. drain 2. gate 3. source z14 z9 c15 c14 c13 z8 c17c16 + c19
90 w, 2.110 ghz ? 2.170 ghz, n-channel e-mode, lateral mosfet AGR21090E typical performance characteristics figure 3. series equivalent input and output impedances mhz (f) z s ? ( complex source impedance ) z l ? (complex optimum load impedance) 2110 (f1) 2.52 ? j4.60 3.10 ? j3.11 2140 (f2) 2.46 ? j4.42 3.01 ? j3.05 2170 (f3) 2.37 ? j4.25 2.94 ? j2.99 0.1 0.1 0.1 0.2 0.2 0.3 0.3 0.4 0.4 0.5 0.5 0.6 0.6 0.7 0.7 0.8 0.8 0.9 0.9 1.0 1.0 1.2 1.2 1.4 1.4 1.6 1.6 1.8 1.8 2.0 2.0 3.0 3.0 4.0 4.0 5.0 5.0 10 10 10 20 20 20 50 50 50 0.2 0.2 0.2 0.4 0.4 0.4 0.6 0.6 0.6 0.8 0.8 0.8 1.0 1.0 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -130 -140 -150 -160 170 -170 180 90 -90 -85 -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 0.19 0.2 0.21 0.22 0.23 0.23 0.24 0.24 0.25 0.25 0.26 0.26 0.27 0.27 0.28 0.29 0.3 0.31 0.32 0.33 0.34 0.35 0.36 0.37 0.38 0.39 0.4 0.41 0.42 0.43 0.44 0.45 0.46 0.47 0.48 0.48 0.49 0.49 0.0 0.0 a n g l e o f t r a n s m i s s i o n c o e f f i c i e n t i n d e g r e e s a n g l e o f r e f l e c t i o n c o e f f i c i e n t i n d e g r e e s e > w a v e l e n g t h s t o w a r d < e w a v e l e n g t h s t o w a r d l o a d < e i n d u c t c a p a c i t i v e r e a c t a n c e c o m p o n e n t ( - j x / z o ) , o r i n d u c t i v e s u s c e p t a n c e ( - j b / y o ) resistance component (r/zo), or conductance component (g/yo) f z s f3 f1 z l f3 f1 z 0 = 5 ? dut z s z l input match output match drain (1) source (3) gate (2)
AGR21090E 90 w, 2.110 ghz ? 2.170 ghz, n-channel e-mode, lateral mosfet typical performance characteristics (continued) test conditions: v dd 28 vdc, f1 = 2135 mhz, f2 = 2145 mhz. two-tone measurement, 10 mhz tone spacing. figure 4. two-tone power gain vs. output power and i dq test conditions: v dd 28 vdc, f1 = 2135 mhz, f2 = 2145 mhz. two-tone measurement, 10 mhz tone spacing. figure 5. imd3 vs. output power and i dq 11.50 12.00 12.50 13.00 13.50 14.00 14.50 15.00 15.50 16.00 16.50 1.00 10.00 100.00 p out (w) pep z g ps (db) s i dq = 500 ma i dq = 650 ma i dq = 800 ma i dq = 950 ma i dq = 1100 ma -70.00 -65.00 -60.00 -55.00 -50.00 -45.00 -40.00 -35.00 -30.00 -25.00 -20.00 1.00 10.00 100.00 1000.00 p out (w) pep z imd3 (dbc) z i dq = 500 ma i dq = 650 ma i dq = 950 ma i dq = 1100 ma i dq = 800 ma
90 w, 2.110 ghz ? 2.170 ghz, n-channel e-mode, lateral mosfet AGR21090E typical performance characteristics (continued) test conditions: v dd 28 vdc, f0 = 2140 mhz, p out = 90 w pep. two-tone measurement, 10 mhz tone spacing. figure 6. imd vs. tone spacing test conditions: v dd 28 vdc, i dq = 800 ma. 2 carrier w-cdma 3gpp peak-to-average = 8.5 db @ 0.01% ccdf, 10 mhz spacing, 3.84 mhz cbw. figure 7. gain, efficiency, im3, and acpr vs. output power -55.0 -50.0 -45.0 -40.0 -35.0 -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 0.1 1 10 100 two-tone spacing (mhz) z imd (dbc) z im7 im5 im3 0.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00 16.00 18.00 20.00 5.00 10.00 15.00 20.00 25.00 30.00 35.00 p out (w-average) z gain (db) z -50.0 -40.0 -30.0 -20.0 -10.0 0.0 10.0 20.0 30.0 40.0 50.0 (%), im3 (dbc), acpr (dbc) z gain im3 acpr
AGR21090E 90 w, 2.110 ghz ? 2.170 ghz, n-channel e-mode, lateral mosfet typical performance characteristics (continued) test conditions: v dd 28 vdc, p out = 19 w, i dq = 800 ma. 2 carrier w-cdma 3gpp peak-to-average = 8.5 db @ 0.01% ccdf, 10 mhz spacing, 3.84 mhz cbw. figure 8. broadband performance test conditions: v dd 28 vdc, p out = 19 w, i dq = 800 ma. 2 carrier w-cdma 3gpp peak-to-average = 8.5 db @ 0.01% ccdf, 10 mhz spacing, 3.84 mhz cbw. figure 9. spectral plot 0.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00 16.00 18.00 20.00 2100 2110 2120 2130 2140 2150 2160 2170 2180 frequency (mhz) z gain (db) z -50.0 -40.0 -30.0 -20.0 -10.0 0.0 10.0 20.0 30.0 40.0 50.0 (%), irl (db), im3 (dbc), acpr (dbc) z gain irl im3 acpr im 3 im3 acpr a cpr center 2.140 ghz span 50 mhz -45 -40 -35 -30 -25 -20 -15 -10 -5 -0 +5 f 2 f1
90 w, 2.110 ghz ? 2.170 ghz, n-channel e-mode, lateral mosfet AGR21090E typical performance characteristics (continued) test conditions: v dd 28 vdc, f0 = 2140 mhz, i dq = 800 ma. cw input. figure 10. am-am and am-pm characteristics 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 15.0 20.0 25.0 30.0 35.0 40.0 45.0 p in (dbm) z p gs (db) z -20.00 -16.00 -12.00 -8.00 -4.00 0.00 4.00 8.00 phase (degrees) z am to am (power gain [db]) am to pm (phase [degrees])
AGR21090E 90 w, 2.110 ghz ? 2.170 ghz, n-channel e-mode, lateral mosfet package dimensions all dimensions are in inches. tolerances are 0.005 in. unless specified. AGR21090Eu AGR21090Ef label notes: ? m before the part number denotes model program. x before the part number denotes engineering prototype. ? the last two letters of the part number denote wafer technology and package type. ? yywwll is the date code including place of manufacture: year year work week (yyww), ll = location (al = allentown, pa; bk = ban gkok, thailand). xxxxx = five-digit wafer lot number. ? zzzzzzz = seven-digit assembly lot number on production parts. ? zzzzzzzzzzzz = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes. pins: 1. drain 2. gate 3. source pins: 1. drain 2. gate 3. source 2 2 3 m-agr21090u yywwll zzzzzzz 1 3 1 peak devices agr21090xu yywwll xxxxx zzzzzzz m-agr21090f 2 zzzzzzz yywwll 1 3 2 3 1 peak devices agr21090xf yywwll xxxxx zzzzzzz
|
